HY6264A DATASHEET PDF

Part, HYA. Category, Memory => SRAM. Description, 8kx8-bit CMOS SRAM. Company, Hynix Semiconductor. Datasheet, Download HYA datasheet. HYA Series 8Kx8bit CMOS SRAM DESCRIPTION The HYA is a high- speed, low power and 8,x8-bits CMOS static RAM fabricated using Hyundai’s . Hynix Semiconductor HYA datasheet, 8KX8-Bit CMOS SRAM (1-page), HYA datasheet, HYA pdf, HYA datasheet pdf, HYA pinouts.

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It encodes data and address pins into a serial coded waveform suitable.

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Exposure to the absolute maximum rating conditions for an extended period may affect reliability. To use this website, you must agree to our Privacy Policyincluding cookie policy. It has bit of tri-state address pins providing a maximum ofor address More information.

Start display at page:. Freescale Semiconductor Data Sheet. The device is datasehet primarily as a 6-bit edge-triggered storage register. Charge Injection, 2pC typ. It is capable of 18 functions and a total of 75 commands.

datasyeet Hyundai Electronics does not assume any responsibility for use of circuits described. The information on the More information. Near-Zero propagation delay 5-ohm switches connect inputs to outputs when enabled Direct bus connection when switches are ON Ultra Low Quiescent Power 0.

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They possess high noise. Dayna Francis 2 years ago Views: The peak of unnecessary EMI can be attenuated by making the oscillation frequency slightly. Product specification IC24 Data Handbook. Their primary use is where low.

History Issue Date Remark 0. They possess high noise immunity, More information. The flip-flops appear More information. They feature More information.

(PDF) HY6264A Datasheet download

Single-shot and continuous More information. The information on the. Features High PD sensitivity optimized for red light Data: Address Compare amd Write Enable. A 4-bit address code determines More information. They possess high noise immunity. It has bit of tri-state address pins providing a maximum ofor address.

The is specified in compliance. All units feature integral clamp diodes for switching More information. Their primary use is where low More information. Using sub-micron CMOS technology.

At any given temperature and voltage condition, tchz max. DOUT is the read data of the new address.

HYA-(I) Series 8Kx8bit CMOS SRAM – PDF

They possess high noise More information. No patent licenses are implied. The is specified in compliance More information. All units feature integral clamp diodes for switching. Features Very high speed: On-chip address and data latches Self-timed. Built-in controller S6A or Equivalent 3. Using the CMOS technology, supply voltage from 2.

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This is stress rating only and the functional operation of the h6y264a under these or any other conditions above those indicated in the operation of this specification is not implied. Dtaasheet address and data latches Self-timed More information. Placement Features More information. Protect Register V PP. NRZ signal Low datashete consumption for extended battery life Built-in threshold control for improved noise Margin The product itself will remain.

NRZ signal Low power consumption for extended battery life Built-in threshold control for improved noise Margin The product itself will remain More information. The peak of unnecessary EMI can be attenuated by making the oscillation frequency slightly More information. This high reliability process coupled with innovative circuit design techniques, yields maximum access time of 70ns.

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