The usual method of determining DRAM node is to take half the minimum WL or BL pitch. That places this DRAM at the nm process node. A 6F 2 DRAM cell with paired cells is described. In one embodiment the cell pairs are separated by n-type isolation transistors having gates defining dummy. PURPOSE: A semiconductor memory device provided with 6F2 dynamic random access memory(DRAM) is provided to increase a sensing margin by enlarging.
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One approach in forming such oxide is to cover the active regions with a layer of silicon nitride that prevents oxidation from occurring therebeneath. Figure 1 is an electrical schematic illustrating paired dynamic random access memory DRAM cells laid out in accordance with one embodiment of the present description.
From this point of view it certainly appears so. Each bit line is connected to one input of a sense amplifier such as sense amp 20 ; the other input of sense amp 20 is connected to a bit line 22 extending over another portion of a DRAM array. A 4F 2 architecture is defined as having a memory cell at each and every possible location, that being each and every crossing of WL and BL, with the cell being 2F x 2F. In one drak serpentine shaped fin-like, semiconductor bodies 40, 41 and 42 are etched from a p-type bulk silicon substrate, each of the bodies 40, 41 and 42 are generally parallel to an adjacent bit line such as bit lines 43, 44 and 45, respectively.
US8519462B2 – 6F2 DRAM cell – Google Patents
As will be seen in FIG. A fourth diffusion region 92 is shown adjacent the second one of the wordlines 22 and is coupled to another one of the bitline contacts 60 of FIG. United States Dran In a step S 6normal production testing is executed.
This file contains additional information such as Exif metadata which may have been added by the digital camera, scanner, or software program used to create or digitize it. And as mentioned, vertical isolation between cells pairs is provided by the isolation transistors which are defined at the intersection of the semiconductor bodies and the vertically disposed dummy word lines such as dummy word lines 52 and 53 of FIG. Method of fabricating semiconductor device including nonvolatile memory and peripheral circuit.
USB2 – 6F2 DRAM cell – Google Patents
The cell is four times the size of the minimum feature, squared. The fabrication of the capacitor is described in co-pending application Ser. The bitline contact 60 and storage node contact 62 correspond to load electrodes of the access device 14while the wordline 22 corresponds to a control electrode. All the word lines shown in FIG.
In a step S 4the second switch is turned OFF. The method includes providing pairs of rows of memory cells and providing an isolation gate separating rows comprising each pair of rows. A word line is positive when selected and maintained at a negative potential when deselected. Consequently, both the access transistors and isolation transistors are n channel devices.
In other instances, well-known processes for fabricating DRAM cells are not described in detail in order not to unnecessarily obscure the present invention. The isolation gate 56 is tied to a low voltage, such as V SS ground or a more negative voltage, e.
It includes a first plate 92 which makes contact with the underlying inlay All the diffusions for the cells occur at the same angle relative to the principal angles of the wafer. Each bit line is connected to one input of a sense amplifier such as sense amp 20 ; the other input of sense amp 20 is connected to a bit line 22 extending over another portion of a DRAM array.
Wafer level burn-in of memory integrated circuits. In one process for fabricating the array of FIG. At this 6c2, the word line 33 is formed in the up and down by 1 every kkeokin wave Wave shape around the 6d2 B intersecting the bit line And as mentioned, vertical isolation between cells pairs is provided by the isolation transistors which are defined at the rram of the semiconductor bodies and the vertically disposed dummy word lines such as dummy word lines 52 and 53 of Figure 2.
Here, the one of the active region 37 is formed in two or more DRAM cell of 6F 2, the active region 37 and intersects the two word lines 33, and one bit line 35 it is f62 connected to the. In one embodiment, the predetermined interval is about twenty milliseconds.
6F2 DRAM cell – Intel Corporation
In one embodiment, the dummy word lines are maintained at a 6t2 less than zero volts relative to zero volts of the substrate.