2N High-Speed,. Silicon N-P-N. TELEPHONE: () () FAX: () MAXIMUM RATINGS, Absolute-Maximum Values. 2N NPN Transistor: 50v, 4a. Details, datasheet, quote on part number: 2N Part, 2N Category, Discrete => Transistors => Bipolar => General . 2N from Solitron Devices, Inc.. Find the PDF Datasheet, Specifications and Distributor Information.

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Small-Outline Plastic Package Q: Can be used for delay times in excess of several days. A white dot will indicate location of Pin 1. Ultra Fast Recovery Rectifiers Features: Resolution – Precision by which the digital 2m5202 represents the analog signal’s magnitude. Very high speed Temperature 2: Also, custom and standard application-specific ICs for military, communication, and automotive applications.

AU9 c O 7iKn Z. Enhanced replacement for the AD at a lower cost. Small Caps Tile 6: Digital channel selection includes a high Z output state for additional multiplexing.

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Full text of ” harris:: V33CH8 20 26 1. Complex Singapore TEL: Harris H j Family: Bidirectional – Handles positive AND negative going transient waveforms.

High Temp Storage 2. IcU 75 3. JANTX types receive percent process conditioning, and power conditioning, and are subjected to lot rejection based on delta dtaasheet criteria in addition to Group A, Group B, and Group C lot sampling. We use advanced technologies to provide innovative and cost-effective solutions to our commercial and government customers in more than countries, and we are committed to providing products, systems, and services of the highest quality.


Holding Current Ih – Minimum on state current that will hold the surgector in the on state after it has been latched on.

Used if more than one electrical option Is available. Temperature, Pressure, Flow, Vibration, Sonic, etc. Satellite communication terminals, tracking and control datasheeg terrestrial communication systems; secure and jam-resistant communication systems; spaceborne information processing systems; missile and spacecraft instrumentation; advanced avionic systems; digital terrain displays; video teleconferencing systems; command and control systems; information and signal processing systems; automatic maintenance and test systems; systems software and integration; telecommunication networks; test-program software for avionics; simulation and training systems; technical support services; real-time super-mini- 2n520 microcomputers; air traffic control and airport management systems; custom integrated telecommunication networks; energy management systems; newspaper text-processing and pagination systems.

Paragraph 1 2 1 – 3 ate non-compliant to Mtl-Std Extra Value Screening Linear product with extra value screening as an X added to the standard type number in the price list, and is also branded as datasheeet.

Variation of baelc device type designator. Average power dissipation of transients not to exceed 2. MS – Fully compliant with B – 18 volts max.

2N NTE Equivalent NTE T-NPN SI SW LINEAR AP – Wholesale Electronics

Higher voltages available— contact Harris Semiconductor Power Marketing. Low power consumption CMOS-like 4. Particularly suitable for automotive surface mount applications.


Refer to data pages on these types for specific differences.

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2j5202 Ratings and characteristics data for these types differ in some aspects from the standardized data for B-series types. Product portfolio includes devices for analog signal processing, digital signal processing, data conversion, interface, logic, microcontrollers, microprocessors, microprocessor peripherals, power conditioning, and intelligent power.

Harris Semiconductor Literature Department P.

DC current gain hfe typically range from to at Collector Current from 3 to 5 amps. Package BDX33D n-p-n 10 min. Slew rate may be specified separately for both positive and negative going changes. Leadless chip carrier S: A white dot wW indicate location of Pin 1. Phyathai, Bangkok TEL: Search the history of over billion web pages on the Internet. This lists categories of devices such as “Amplifiers,” and “Microprocessors” with reference to one of the eight sections plus the sub-section.

2N5202 डेटा पत्रक PDF( Datasheet डाउनलोड )

Package MJ n— p— n 15—60 8 4 1. Findlay, Ohio; Milpitas, California; Research Triangle Park, North Carolina; Kuala Lumpur, Malaysia Military and Aerospace Division has been an industry leader for nearly three decades in radiation-hardened rad-hard integrated circuits that provide high performance and high reliability in severe operating environments. Power dissipation of transients not to exceed 0.