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10N60C Datasheet, PDF – Alldatasheet
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These devices are well suited for high effi-ciency switched mode power supplies, 10h60c power factor correction, electronic lamp ballasts based on half bridge topology. This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
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G E – very tight parameter distribution – high ruggedness, temperature stable behavior – low V CEsat – easy parallel switching capability due to positive 1. Please allow business days for a response. These devices are 1.
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The transistor can be used in various 1. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode.
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